Product Details Portlet

EE-SY313/EE-SY413 Photomicrosensor (Reflective)

 

  • Incorporates an IC chip with a built-in detector element and amplifier.
  • Incorporates a detector element with a built-in temperature compensation circuit.
  • Compact reflective Photomicrosensor (EE-SY310/-SY410) with a molded housing and a dust-tight cover.
  • A wide supply voltage range: 4.5 to 16 VDC
  • Directly connects with C-MOS and TTL.
  • Dark ON model (EE-SY313)
  • Light ON model (EE-SY413)
  • Recommended sensing distance = 4.4 mm

Last order Date:Mar.31,2021

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Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.
Absolute Maximum Ratings (Ta = 25ºC)
Item
Symbol
Rated value
Emitter
Forward current
 IF 50 mA (see note 1)
Reverse voltage
 VR 4 V
Pulse forward current
 IFP 1 A (see note 2)
Detector
Power supply voltage
 VCC 16 V
Output voltage
 VOUT 28 V
Output current
 IOUT 16 mA
Permissible output dissipation
 POUT 250 mW (see note 1)
Ambient temperature
Operating
 Topr -40ºC to 65ºC
Storage
 Tstg -40ºC to 85ºC
Soldering temperature
 Tsol 260ºC (see note 3)
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
  2. The pulse width is 10 µs maximum with a frequency of 100 Hz.
  3. Complete soldering within 10 seconds.

Electrical and Optical Characteristics (Ta = 25ºC)
Item
Symbol
Value
Condition
Emitter
Forward voltage
 VF 1.2 V typ., 1.5 V max. IF=20 mA
Reverse current
 IR 0.01 µA typ., 10 µA max. VR=4 V
Peak emission wavelength
 λP 920 nm typ. IF=20 mA
Detector
Low-level output voltage
 VOL 0.12 V typ., 0.4 V max. Vcc = 4.5 to 16 V, IOL = 16 mA,
without incident light (EE-SY313), with incident light (EE-SY413) (see notes 1 and 2)
High-level output voltage
 VOH 15 V min. VCC = 16 V, RL = 1 kΩ,
with incident light (EE-SY313), without incident light (EE-SY413) (see notes 1 and 2)
Current consumption
 ICC 3.2 mA typ., 10 mA max. VCC=16V
Peak spectral sensitivity wavelength
 λP 870 nm typ. VCC=4.5 to 16V
LED current when output is OFF
 IFT 10 mA typ., 20 mA max. VCC=4.5 to 16V
LED current when output is ON
Hysteresis
 ΔH 17% typ. VCC=4.5 to 16V
Response frequency
 f 50 Hz min. VCC=4.5 to 16V,
IF=20mA,IOL=16mA
Response delay time
 tPLH
(tPHL)		 3 µs typ. VCC=4.5 to 16V,
IF=20mA,IOL=16mA
Response delay time
 tPHL
(tPLH)		 20 µs typ. VCC=4.5 to 16V,
IF=20mA,IOL=16mA
Note: 1. "With incident light" denotes the condition whereby the light reflected by white paper with a reflection factor of 90% at a sensing distance of 4.4 mm is received by the photo IC when the forward current (IF) of the LED is 20 mA.
  2. Sensing object: White paper with a reflection factor of 90% at a sensing distance of 4.4 mm.
  3. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC is turned from ON to OFF and when the photo IC is turned from OFF to ON.
  4. The value of the response frequency is measured by rotating the disk as shown below.
  5. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EE-SY413.
Note: All units are in millimeters unless otherwise indicated.
 
EE-SY313/-SY413 Dimensions1

Internal Circuit
 
Terminal No.
Name
A Anode
K Cathode
V Power supply (VCC)
O Output (OUT)
G Ground (GND)

Unless otherwise specified, the tolerances are as shown below.
Dimensions
Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65