Product Details Portlet
Unless otherwise specified, the tolerances are as shown below.
EE-SB5/EE-SB5-B Photomicrosensor (Reflective)
- Dust-tight construction.
- With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps.
- Mounted with M3 screws.
- Model with soldering terminals (EE-SB5).
- Model with PCB terminals (EE-SB5-B).
- Recommended sensing distance = 5.0 mm
EE-SB5-B:Last order Date:Mar.31,2021
RoHS Compliant
- Korean
센서다이제스트
- English
Datasheet
- English
Micro Sensing Device Data Book
- English
Sensors Selector Guide
- English
Photomicrosensors Selection Guide

Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.
Absolute Maximum Ratings (Ta = 25ºC)
Electrical and Optical Characteristics (Ta = 25ºC)
Item |
Symbol
|
Rated value
|
|
---|---|---|---|
Emitter | Forward current | IF | 50 mA (see note 1) |
Pulse forward current | IFP | 1 A (see note 2) |
|
Reverse voltage | VR | 4 V | |
Detector | Collector-Emitter voltage | VCEO | 30 V |
Emitter-Collector voltage | VECO | --- | |
Collector current | IC | 20 mA | |
Collector dissipation | PC | 100 mW (see note 1) |
|
Ambient temperature | Operating | Topr | -25ºC to 80ºC |
Storage | Tstg | -30ºC to 80ºC | |
Soldering temperature | Tsol | 260ºC (see note 3) |
Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
2. | The pulse width is 10 μs maximum with a frequency of 100 Hz. | |
3. | Complete soldering within 10 seconds. |
Electrical and Optical Characteristics (Ta = 25ºC)
Item |
Symbol
|
Value
|
Condition
|
|
---|---|---|---|---|
Emitter | Forward voltage | VF | 1.2 V typ., 1.5 V max. | IF = 30 mA |
Reverse current | IR | 0.01 μA typ., 10 μA max. | VR = 4 V | |
Peak emission wavelength | λP | 940 nm typ. | IF = 20 mA | |
Detector | Light current | IL | 200 μA min., 2,000 μA max. | IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) |
Dark current | ID | 2 nA typ., 200 nA max. | VCE = 10 V,0 |
|
Leakage current | ILEAK | 2 μA max. | IF = 20 mA, VCE = 10 V with no reflection | |
Collector-Emitter saturated voltage | VCE (sat) | --- | --- | |
Peak spectral sensitivity wavelength | λP | 850 nm typ. | VCE = 10 V | |
Rising time | tr | 30 μs typ. | VCC = 5 V, RL = 1 kΩ, IL = 1 mA | |
Falling time | tf | 30 μs typ. | VCC = 5 V, RL = 1 kΩ, IL = 1 mA |
Note: | The letter “d” indicates the distance between the top surface of the sensor and the sensing object. |
Note: All units are in millimeters unless otherwise indicated. |
Terminal No.
|
Name
|
---|---|
A | Anode |
K | Cathode |
C | Collector |
E | Emitter |
Unless otherwise specified, the tolerances are as shown below.
Dimensions
|
Tolerance
|
---|---|
3 mm max. | ±0.3 |
3 < mm ≤ 6 | ±0.375 |
6 < mm ≤ 10 | ±0.45 |
10 < mm ≤ 18 | ±0.55 |
18 < mm ≤ 30 | ±0.65 |