Product Details Portlet

EE-SY1200 Photomicrosensor (Reflective)

 

  • Ultra-compact model.
  • PCB surface mounting type.
  • High S/N ratio (High light current / Low leakage current)
  • Recommended sensing distance = 1.0 to 4.0 mm
RoHS Compliant
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Model 2D/3D CAD
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Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.
Absolute Maximum Ratings (Ta = 25ºC)
Item Symbol Rated value Unit
Emitter Forward current IF 50*1 mA
Pulse forward current IFP 500*2 mA
Reverse voltage VR 4 V
Detector Collector-Emitter voltage VCEO 30 V
Emitter-Collector voltage VECO 5 V
Collector current IC 20 mA
Collector dissipation PC 50*1 mW
Operating temperature Topr −25 to +85 ºC
Storage temperature Topr −40 to +100 ºC
Reflow soldering temperature Topr 240*3 ºC
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25ºC.
  2. The pulse width is 10 s maximum with a frequency of 100 Hz.
  3. Complete soldering within 10 seconds for reflow soldering.

Electrical and Optical Characteristics (Ta = 25ºC)
Item Symbol Value Unit Condition
MIN. TYP. MAX.
Emitter Forward voltage VF --- 1.2 1.4 V IF = 20 mA
Reverse current IR --- --- 10 μA VR = 4V
Peak emission wavelength λP --- 940 --- nm ---
Detector Light current1 IL1 200 --- 1000 μA IF = 10 mA, VCE = 2 V, Aluminum-deposited surface, d = 4 mm*1
Light current2 IL2 150 --- --- μA IF = 4 mA, VCE = 2 V, Aluminum-de-posited surface, d = 1 mm*1
Dark current ID --- 2 200 nA VCE = 10 V, 0 x
Leakage current1 ILEAK1 --- --- 500 nA IF = 10 mA,VCE = 2 V with no reflection*2
Leakage current2 ILEAK2 --- --- 200 nA IF = 4 mA,VCE = 2 V with no reflection*2
Collector-Emitter saturated voltage VCE (sat) --- --- --- V ---
Peak spectral sensitivity wavelength λP --- 850 --- nm ---
Rising time tr --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Falling time tf --- 30 --- μs VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1
Note: 1. The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
  2. Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which
is reflected from surroundings of the Photomicrosensor and /or the background object.
Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use.
EESY1200:Dimensions
Note. Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is part Au plating area.

Recommended Soldering Pattern
EESY1200:Dimensions
Note 1. The shaded portion in the above figure may cause shorting.
Do not wire in this portion.
2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm.

EESY1200:Dimensions

Internal Circuit
EESY1200:Dimensions
 
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter