Product Details Portlet
Note. Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is part Au plating area.
Recommended Soldering Pattern
Note 1. The shaded portion in the above figure may cause shorting.
Do not wire in this portion.
2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm.
Internal Circuit
EE-SY1200 Photomicrosensor (Reflective)
- Ultra-compact model.
- PCB surface mounting type.
- High S/N ratio (High light current / Low leakage current)
- Recommended sensing distance = 1.0 to 4.0 mm
RoHS Compliant
- Korean
센서다이제스트
- English
Datasheet
- English
Micro Sensing Device Data Book
- English
Sensors Selector Guide
- English
Photomicrosensors Selection Guide
Model | 2D/3D CAD |
---|---|
EE-SY1200 | Download |

Note: This web page provides an excerpt from a datasheet. Refer to Product Datasheet and other applicable documents for more information.
Absolute Maximum Ratings (Ta = 25ºC)
Electrical and Optical Characteristics (Ta = 25ºC)
Item | Symbol | Rated value | Unit | |
---|---|---|---|---|
Emitter | Forward current | IF | 50*1 | mA |
Pulse forward current | IFP | 500*2 | mA | |
Reverse voltage | VR | 4 | V | |
Detector | Collector-Emitter voltage | VCEO | 30 | V |
Emitter-Collector voltage | VECO | 5 | V | |
Collector current | IC | 20 | mA | |
Collector dissipation | PC | 50*1 |
mW | |
Operating temperature | Topr | −25 to +85 | ºC | |
Storage temperature | Topr | −40 to +100 | ºC | |
Reflow soldering temperature | Topr | 240*3 | ºC |
Note: | 1. | Refer to the temperature rating chart if the ambient temperature exceeds 25ºC. |
2. | The pulse width is 10 s maximum with a frequency of 100 Hz. | |
3. | Complete soldering within 10 seconds for reflow soldering. |
Electrical and Optical Characteristics (Ta = 25ºC)
Item | Symbol | Value | Unit | Condition | |||
---|---|---|---|---|---|---|---|
MIN. | TYP. | MAX. | |||||
Emitter | Forward voltage | VF | --- | 1.2 | 1.4 | V | IF = 20 mA |
Reverse current | IR | --- | --- | 10 | μA | VR = 4V | |
Peak emission wavelength | λP | --- | 940 | --- | nm | --- | |
Detector | Light current1 | IL1 | 200 | --- | 1000 | μA | IF = 10 mA, VCE = 2 V, Aluminum-deposited surface, d = 4 mm*1 |
Light current2 | IL2 | 150 | --- | --- | μA | IF = 4 mA, VCE = 2 V, Aluminum-de-posited surface, d = 1 mm*1 | |
Dark current | ID | --- | 2 | 200 | nA | VCE = 10 V, 0 |
|
Leakage current1 | ILEAK1 | --- | --- | 500 | nA | IF = 10 mA,VCE = 2 V with no reflection*2 | |
Leakage current2 | ILEAK2 | --- | --- | 200 | nA | IF = 4 mA,VCE = 2 V with no reflection*2 | |
Collector-Emitter saturated voltage | VCE (sat) | --- | --- | --- | V | --- | |
Peak spectral sensitivity wavelength | λP | --- | 850 | --- | nm | --- | |
Rising time | tr | --- | 30 | --- | μs | VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 | |
Falling time | tf | --- | 30 | --- | μs | VCC = 2 V, RL = 1 kΩ, IL = 100 μA, d = 1 mm*1 |
Note: | 1. | The letter “d” indicates the distance between the top surface of the sensor and the sensing object. |
2. | Depends on the installed condition of the Photomicrosensor, the detector may receive the sensor's LED light and/or the external light which is reflected from surroundings of the Photomicrosensor and /or the background object. Please confirm the condition of the Photomicrosensor by actual intended application prior to the mass production use. |
Note. Unless otherwise specified tolerances are ±0.15.
No burrs dimensions are included in outline dimensions.
The burrs dimensions are 0.15 MAX.
Diagonal line indicate the region is part Au plating area.
Recommended Soldering Pattern
Note 1. The shaded portion in the above figure may cause shorting.
Do not wire in this portion.
2. The dimensional tolerance for the recommended soldering pattern is ±0.1 mm.
Internal Circuit
Terminal No. | Name |
---|---|
A | Anode |
K | Cathode |
C | Collector |
E | Emitter |